^>.m.l-c.ond\jlc.toi lpioducti, 20 stern ave. springfield, new jersey 07081 u.s.a. n-channel mosfet transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 IRF630N description ? drain current -id=9.3a@ tc=25c ? drain source voltage- : vdss= 200v(min) ? static drain-source on-resistance ? fast switching speed ? low drive requirement applications ? this device is n-channel, enhancement mode, power mosfet designed especially for high power, high speed applications, such as switching power supplies.ups, ac and dc motor con- trols, relay and solenoid drivers and high energy pulse circuits. absolute maximum ratings(ta=25c) symbol vdss vos id po t, tstg arameter drain-source voltage (vgs=o) gate-source voltage drain current-continuous? tc=25'c total dissipation@tc=25'c max. operating junction temperature storage temperature range value 200 20 9.3 82 175 -55-175 unit v v a w r c thermal characteristics symbol rth j-c rth j-a parameter thermal resistance, junction to case thermal resistance, junction to ambient max 1.83 62 unit "c/w ?c/w , y-x , mm - - w t ': i j > \n '.. l i 1 2 ? 0(2) /dk ki ^^ o s(3) lgate 2. drain 3. source to-220c package ?4 |?t a t ' ? b - "* v-h ,- <^ jo.ocv ? 44"' k f 1 : h r t h*d g - - i- ? i ^ dim a b c d f g h j k l cl r s u tf f "* so*-. l mm min 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 max 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 *s ? is ofi / \ ?r*-j r|^ nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
n-channel mosfet transistor IRF630N electrical characteristics (tc=25c) symbol v(br)dss vgs(th) ros(on) loss loss vsd parameter drain-source breakdown voltage gate threshold voltage drain-source on-stage resistance gate source leakage current zero gate voltage drain current diode forward voltage conditions vgs=o; ld=0.25ma vds= vgs; id= 0.25ma vgs=10v; id=5.4a vgs=20v;vds=0 vds=200v; vgs=0 if= 5.4a; vgs=0 min 200 2 max 4 0.3 100 25 1.3 unit v v q na ua v
|
